Edge-trimming methods for wafer bonding and dicing

ABSTRACT

A front-side peripheral region of a first wafer may be edge-trimmed by performing a first pre-bonding edge-trimming process. A second wafer to be bonded with the first wafer is provided. Optionally, a front-side peripheral region of the second wafer may be edge-trimmed by performing a second pre-bonding edge-trimming process. A front surface of the first wafer is bonded to a front surface of a second wafer to form a bonded assembly. A backside of the first wafer is thinned by performing at least one wafer thinning process. The first wafer and a front-side peripheral region of the second wafer may be edge-trimmed by performing a post-bonding edge-trimming process. The bonded assembly may be subsequently diced into bonded semiconductor chips.

BACKGROUND

Wafer thinning is used in conjunction with wafer bonding to provide asemiconductor chip including a vertical stack of at least twosemiconductor dies. A first wafer including first semiconductor devicesmay be bonded to a second wafer including second semiconductor devices.One of the two bonded wafers may be thinned after bonding. Bonded andthinned semiconductor wafers may be subsequently diced to form multiplesemiconductor chips, which may have higher density, multiple functions,and/or faster operational speed provided through vertical bonding of atleast two semiconductor dies. Edge regions of a wafer that do notinclude bonded portions of the semiconductor dies may be edge-trimmedduring a wafer thinning process to prevent the bonded wafer assemblyfrom peeling. Prior art methods for edge-trimming typically use multipleedge-trimming processes after grinding the backside of one of the twowafers in a bonded assembly. The multiple edge-trimming processes usesequentially decreasing edge offset to minimize wafer chipping. Suchwafer edge-trimming methods may induce more sources for film peeling,and have additional issues such as a short trim lifetime, longedge-trimming process duration, high processing cost, and high demand onedge-trimming tool capacity.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is a vertical cross-sectional view of a first wafer according toa first embodiment of the present disclosure.

FIG. 1B is a top-down view of the first wafer of FIG. 1A.

FIG. 1C is a magnified vertical cross-sectional view of region C of FIG.1A.

FIG. 2A is a vertical cross-sectional view of the first wafer after afirst edge-trimming process according to the first embodiment of thepresent disclosure.

FIG. 2B is a top-down view of the first wafer of FIG. 2A.

FIG. 3A is a vertical cross-sectional view of a second wafer accordingto the first embodiment of the present disclosure.

FIG. 3B is a top-down view of the first wafer of FIG. 3A.

FIG. 4A is a vertical cross-sectional view of a first exemplarystructure after bonding the first wafer to the second wafer according tothe first embodiment of the present disclosure.

FIG. 4B is a top-down view of the first exemplary structure of FIG. 4A.

FIG. 5A is a vertical cross-sectional view of the first exemplarystructure after a first thinning process that grinds the backside of thefirst wafer according to the first embodiment of the present disclosure.

FIG. 5B is a top-down view of the first exemplary structure of FIG. 5A.

FIG. 6A is a vertical cross-sectional view of the first exemplarystructure after a second thinning process that thins the first waferaccording to the first embodiment of the present disclosure.

FIG. 6B is a top-down view of the first exemplary structure of FIG. 5A.

FIG. 7A is a vertical cross-sectional view of the first exemplarystructure after performing a terminal edge-trimming process according tothe first embodiment of the present disclosure.

FIG. 7B is a top-down view of the first exemplary structure of FIG. 7A.

FIG. 7C is a magnified vertical cross-sectional view of a peripheralregion of the first exemplary structure of FIGS. 7A and 7B.

FIG. 8 is a magnified vertical cross-sectional view of the firstexemplary structure after formation of through-substrate via cavitiesaccording to the first embodiment of the present disclosure.

FIG. 9 is a magnified vertical cross-sectional view of the firstexemplary structure after formation of through-substrate via structuresand backside bonding pads according to the first embodiment of thepresent disclosure.

FIG. 10A is a vertical cross-sectional view of the first exemplarystructure at the processing step of die singulation according to thefirst embodiment of the present disclosure.

FIG. 10B is a top-down view of the first exemplary structure of FIG.10A.

FIG. 11A is a vertical cross-sectional view of a second wafer after asecond edge-trimming process according to a second embodiment of thepresent disclosure.

FIG. 11B is a top-down view of the first wafer of FIG. 11A.

FIG. 12A is a vertical cross-sectional view of a second exemplarystructure after bonding the first wafer to the second wafer according tothe second embodiment of the present disclosure.

FIG. 12B is a top-down view of the second exemplary structure of FIG.12A.

FIG. 13A is a vertical cross-sectional view of the second exemplarystructure after a first thinning process that grinds the backside of thefirst wafer according to the second embodiment of the presentdisclosure.

FIG. 13B is a top-down view of the second exemplary structure of FIG.13A.

FIG. 14A is a vertical cross-sectional view of the second exemplarystructure after a second thinning process that thins the first waferaccording to the second embodiment of the present disclosure.

FIG. 14B is a top-down view of the second exemplary structure of FIG.14A.

FIG. 15A is a vertical cross-sectional view of the second exemplarystructure after performing a terminal edge-trimming process according tothe second embodiment of the present disclosure.

FIG. 15B is a top-down view of the second exemplary structure of FIG.15A.

FIG. 16 is a first flowchart illustrating steps for forming an exemplarystructure according to an embodiment of the present disclosure.

FIG. 17 is a second flowchart illustrating steps for forming anexemplary structure according to an embodiment of the presentdisclosure.

FIG. 18 is a third flowchart illustrating steps for forming an exemplarystructure according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The present disclosure is directed to generally to semiconductordevices, and specifically to a method of edge-trimming wafers during awafer bonding and dicing process.

Generally, the methods of the present disclosure minimize the volume ofedge-trimmed portions of semiconductor substrates during a wafer bondingprocess. A front-side peripheral portion of a first semiconductorsubstrate may be edge-trimmed in a pre-bonding edge-trimming processwithout edge-trimming a backside peripheral portion of the firstsemiconductor substrate. Compared to a prior art method in which anentirety of a periphery of a semiconductor substrate is edge-trimmedafter bonding to another substrate and prior to thinning thesemiconductor substrate, the depth of edge-trimming into the firstsemiconductor substrate may be significantly less, such as less than 50microns. As such, the volume of a peripheral portion of the firstsemiconductor substrate that may be removed during the pre-bondingedge-trimming process of the present disclosure may be significantlydecreased. For example, a typical prior art edge-trimming processperformed on a bonded pair of 450 mm diameter wafers with an edge-trimwidth of about 3 mm may have a removal volume of π×450 mm×3 mm×0.825mm≅3,500 mm³=3.5 cm³ for one of the two bonded wafers. In comparison, apre-bonding edge-trimming process on a 450 mm diameter wafer with aedge-trimming depth of 30 microns and a edge-trimming width of 3 mmaccording to an illustrative example of an embodiment of the presentdisclosure removes only π×450 mm×3 mm×0.030 mm≅127 mm³=0.127 cm³′ Assuch, the methods of the present disclosure may reduce the amount oftrimmed material portions of a wafer. Such reduction in the amount oftrimmed material portions reduces the processing time and the processingcost for the wafer edge-trimming processes used during a bondingprocess, and increases the lifetime of a edge-trimming tool.

Further, in various embodiments, peripheral portions of material layerslocated on bonding sides of the wafers may be effectively removed priorto bonding a pair of wafers. In one embodiment, a second semiconductorsubstrate to be bonded to the first semiconductor substrate may beoptionally edge-trimmed prior to bonding with the first semiconductorsubstrate. Material portions located at peripheral portions of thesemiconductor wafers and having weaker adhesion to the semiconductorsubstrates may be removed prior to bonding during the pre-bondingedge-trimming processes. Thus, the pre-bonding edge-trimming processesmay reduce flaking or peeling of material portions during, or after, thewafer bonding process. The various features and aspects of the methodsof the present disclosure are now described in detail with reference tothe drawings.

Referring to FIGS. 1A-1C, a first wafer 100 according to an embodimentof the present disclosure is illustrated. The first wafer 100 includes afirst semiconductor substrate 108, which may comprise a commerciallyavailable semiconductor substrate such as a single crystalline siliconsubstrate having a diameter of 200 mm, 300 mm, or 450 mm and having athickness in a range from 600 microns to 1 mm, although lesser andgreater thicknesses may also be used. The first semiconductor substrate108 may have a planar front surface and a planar backside surface thatare parallel to each other. The edge of the first semiconductorsubstrate 108 may have edge rounding. In other words, a convex surfacethat changes the direction by 180 degrees in a vertical cross-sectionalview may extend around the entire periphery of the first semiconductorsubstrate 108. The convex surface may connect the planar front surfaceand the planar backside surface of first semiconductor substrate 108 sothat the first semiconductor substrate 108 is devoid of any sharp edge.In one embodiment, the first semiconductor substrate 108 may include arespective commercially available single crystalline silicon substratehaving a same diameter.

The first wafer 100 may be provided by forming semiconductor devices onthe first semiconductor substrate 108 and by forming firstinterconnect-level structures (L0-L6) and a first pad-level structureLP. The semiconductor devices formed on the first semiconductorsubstrate 108 are herein referred to as first semiconductor devices. Thefirst interconnect-level structures (L0-L6) may be formed on the firstsemiconductor substrate 108, and are incorporated into the first wafer100. An embodiment is described with first interconnect-level structures(L0-L6). However, one of skill in the art would understand that greateror lesser interconnect-level structures are within the contemplatedscope of disclosure. The first interconnect-level structures (L0-L6) andthe first pad-level structure LP may be laterally offset from theoutermost periphery of the first wafer 100 by a lateral offset distance,which may be in a range from 0.2 mm to 1 mm, although lesser and greaterdistances may also be used. The lateral offset between the firstinterconnect-level structures (L0-L6) and the outermost periphery of thefirst wafer 100 is referred to as an edge exclusion distance.

The first interconnect-level structures (L0-L6) include dielectricmaterial layers, which are herein referred to as firstinterconnect-level dielectric layers. The first interconnect-leveldielectric layers having formed therein metal interconnect structures,which are herein referred to as first metal interconnect structures.Thus, the first wafer 100 comprises first metal interconnect structuresformed within the first interconnect-level dielectric layers. The firstpad-level structure LP includes a pad-level dielectric layer and bondingpads formed within the first pad-level dielectric layer. The firstpad-level structure LP may be formed on top of the first-waferinterconnect-level structures (L0-L6).

FIG. 1C illustrates semiconductor devices 330 and interconnect-levelstructures (L0-L6) that may be formed on the first semiconductorsubstrate 108. In an illustrative example, the first semiconductorsubstrate 108 may include a bulk semiconductor substrate such as asilicon substrate in which the semiconductor material layer continuouslyextends from a top surface of the first semiconductor substrate 108 to abottom surface of the first semiconductor substrate 108, or asemiconductor-on-insulator layer including a semiconductor materiallayer as a top semiconductor layer overlying a buried insulator layer(such as a silicon oxide layer) and a handle semiconductor substrate.

Semiconductor devices 330 such as field effect transistors may be formedon, and/or in, the first semiconductor substrate 108. For example,shallow trench isolation structures 12 may be formed in an upper portionof the first semiconductor substrate 108 by forming shallow trenches andsubsequently filling the shallow trenches with a dielectric materialsuch as silicon oxide. Various doped wells (not expressly shown) may beformed in various regions of the upper portion of the firstsemiconductor substrate 108 by performing masked ion implantationprocesses.

Gate structures 20 may be formed over the top surface of the firstsemiconductor substrate 108 by depositing and patterning a gatedielectric layer, a gate electrode layer, and a gate cap dielectriclayer. Each gate structure 20 may include a vertical stack of a gatedielectric 22, a gate electrode 24, and a dielectric gate cap 28, whichis herein referred to as a gate stack (22, 24, 28). Ion implantationprocesses may be performed to form extension implant regions, which mayinclude source extension regions and drain extension regions. Dielectricgate spacers 26 may be formed around the gate stacks (22, 24, 28). Eachassembly of a gate stack (22, 24, 28) and a dielectric gate spacer 26constitutes a gate structure 20. Additional ion implantation processesmay be performed using the gate structures 20 as self-alignedimplantation masks to form deep active regions, which may include deepsource regions and deep drain regions. Upper portions of the deep activeregions may overlap with portions of the extension implantation regions.Each combination of an extension implantation region and a deep activeregion constitutes an active region 14, which may be a source region ora drain region depending on electrical biasing. A semiconductor channel15 may be formed underneath each gate stack (22, 24, 28) between aneighboring pair of active regions 14. Metal-semiconductor alloy regions18 may be formed on the top surface of each active region 14. Fieldeffect transistors may be formed on the first semiconductor substrate108. Each field effect transistor may include a gate structure 20, asemiconductor channel 15, a pair of active regions 14 (one of whichfunctions as a source region and another of which functions as a drainregion), and optional metal-semiconductor alloy regions 18. Acomplementary metal-oxide-semiconductor (CMOS) circuit may be providedon the first semiconductor substrate 108, which may include a peripherycircuit for the array(s) of resistive memory elements to be subsequentlyformed. While the present disclosure provides only complementarymetal-oxide-semiconductor (CMOS) devices as the first semiconductordevices, it is understood that any other semiconductor device (such asmemory devices, radio-frequency devices, image-sensing devices, passivedevices, etc.) may be added to, or may replace, the CMOS devices in thefirst wafer 100.

Various interconnect-level structures may be subsequently formed. In anillustrative example, the interconnect-level structures (L0-L6) mayinclude a contact-level structure L0, a first interconnect-levelstructure L1, a second interconnect-level structure L2, a thirdinterconnect-level structure L3, a fourth interconnect-level structureL4, a fifth interconnect-level structure L5, and a sixthinterconnect-level structure L6. The contact-level structure L0 mayinclude a planarization dielectric layer 31A including a planarizabledielectric material such as silicon oxide and various contact viastructures 41V contacting a respective one of the active regions 14 orthe gate electrodes 24 and formed within the planarization dielectriclayer 31A. The first interconnect-level structure L1 may include a firstinterconnect-level dielectric layer 31B and first metal lines 41L formedwithin the first interconnect-level dielectric layer 31B. The firstinterconnect-level dielectric layer 31B is also referred to as a firstline-level dielectric layer. The first metal lines 41L may contact arespective one of the contact via structures 41V. The secondinterconnect-level structure L2 may include a second interconnect-leveldielectric layer 32. The second interconnect-level dielectric layer 32may include a stack of a first via-level dielectric material layer and asecond line-level dielectric material layer or a line-and-via-leveldielectric material layer. The second interconnect-level dielectriclayer 32 having formed therein second interconnect-level metalinterconnect structures (42V, 42L), which may include first metal viastructures 42V and second metal lines 42L. Top surfaces of the secondmetal lines 42L may be coplanar with the top surface of the secondinterconnect-level dielectric layer 32.

The third interconnect-level metal interconnect structures (43V, 43L)may include second metal via structures 43V and third metal lines 43Lformed within third interconnect-level dielectric layer 33. Additionalinterconnect-level structures (L4, L5, L6) may be subsequently formed.For example, the additional interconnect-level structures (L4, L5, L6)may include a fourth interconnect-level structure L4, a fifthinterconnect-level structure L5, and a sixth interconnect-levelstructure L6. The fourth interconnect-level structure L4 may include afourth interconnect-level dielectric layer 34 having formed thereinfourth interconnect-level metal interconnect structures (44V, 44L),which may include third metal via structures 44V and fourth metal lines44L. The fifth interconnect-level structure L5 may include a fifthinterconnect-level dielectric layer 35 having formed therein fifthinterconnect-level metal interconnect structures (45V, 45L), which mayinclude fourth metal via structures 45V and fifth metal lines 45L. Thesixth interconnect-level structure L6 may include a sixthinterconnect-level dielectric layer 36 having formed therein sixthinterconnect-level metal interconnect structures (46V, 46L), which mayinclude fifth metal via structures 46V and sixth metal lines 46L.

A pad-level structure LP, which is herein referred to as a secondpad-level structure, may be formed above the interconnect-levelstructures (L0-L6). The pad-level structure LP may include a pad-leveldielectric layer 37 having formed therein terminal metal via structures47V and metal bonding pads 47B. The metal bonding pads 47B may beconfigured for metal-to-metal bonding (such as copper-to-copperbonding).

Each interconnect-level dielectric layer may be referred to as aninterconnect-level dielectric (ILD) layer 30. Each interconnect-levelmetal interconnect structures may be referred to as a metal interconnectstructure 40. Each combination of a metal via structure and an overlyingmetal line located within a same interconnect-level structure (L1-L6)may be formed sequentially as two distinct structures by using twosingle damascene processes, or may be simultaneously formed as a unitarystructure using a dual damascene process. Each of the metal interconnectstructure 40 may include a respective metallic liner (such as a layer ofTiN, TaN, or WN having a thickness in a range from 2 nm to 20 nm) and arespective metallic fill material (such as W, Cu, Co, Mo, Ru, otherelemental metals, or an alloy or a combination thereof). Various etchstop dielectric layers and dielectric capping layers may be insertedbetween vertically neighboring pairs of ILD layers 30, or may beincorporated into one or more of the ILD layers 30.

While the present disclosure is described using an embodiment in which aset of seven interconnect-level structures (L0-L6) are formed,embodiments are expressly contemplated herein in which a differentnumber of interconnect-level structures is used in the first wafer 100.For example, the number of interconnect-level structures (L0-L6) withinthe first wafer 100 may be in a range from 1 to 20, such as from 2 to10, although lesser and greater number of interconnect level structuresmay also be used. Generally, the first wafer 100 may comprise a firsttwo-dimensional array of first semiconductor dies. The firstsemiconductor dies may be arranged as a periodic two-dimensional array,and may be laterally spaced from one another by dicing channels.

Referring to FIGS. 2A and 2B, a first pre-bonding edge-trimming processmay be performed to trim a front-side peripheral region of the firstwafer 100. An edge-trimming process generally refers to a process inwhich an edge portion of a substrate is removed along the entirecircumference of the substrate. The first pre-bonding edge-trimmingprocess may remove an annular peripheral portion of the first wafer 100that is located within a first edge-trimming width tw1 from theoutermost periphery of the first wafer 100, and is located within afirst edge-trimming depth td1 from a horizontal plane including the topsurface of the first wafer 100. A commercial wafer edge-trimming toolmay be used to perform the first pre-bonding edge-trimming process. Thefirst pre-bonding edge-trimming process forms an annular horizontaledge-trimming surface within a horizontal plane located at the firstedge-trimming depth td1 from the front surface of the first wafer 100.Further, the first pre-bonding edge-trimming process forms a firstcylindrical sidewall on the first wafer 100 at a location that islaterally offset from the outermost periphery of the first wafer 100 bythe first edge-trimming width tw1. In one embodiment, the firstedge-trimming width tw1 may be in a range from 0.1 mm to 5.0 mm,although lesser and greater first edge-trimming widths may also be used.The first edge-trimming width tw1 may be greater than the edge exclusiondistance, and is less than a terminal edge-trimming width of apost-bonding edge-trimming process to be used. In one embodiment, thefirst edge-trimming depth td1 may be in a range from 10 microns to 50microns, although lesser and greater first edge-trimming depths may alsobe used. The first edge-trimming depth td1 is greater than a thicknessto which the first wafer 100 is thinned during a post-bonding thinningprocess, and is less than 50%, such as less than 15%, of the thicknessof the first wafer 100.

Referring to FIGS. 3A and 3B, a second wafer 200 with a second lateraloffset according to an embodiment of the present disclosure isillustrated. The second wafer 200 includes a second semiconductorsubstrate 208, which may comprise a commercially available semiconductorsubstrate such as a single crystalline silicon substrate having adiameter of 200 mm, 300 mm, or 450 mm and having a thickness in a rangefrom 600 microns to 1 mm, although lesser and greater thicknesses mayalso be used. The second semiconductor substrate 208 has a planar frontsurface and a planar backside surface that are parallel to each other.The edge of the second semiconductor substrate 208 may have edgerounding. In one embodiment, the second semiconductor substrate 208 mayinclude a respective commercially available single crystalline siliconsubstrate having a same diameter.

The second wafer 200 may be provided by forming semiconductor devices onthe second semiconductor substrate 208 and by forming secondinterconnect-level structures (L0-L6) and a second pad-level structureLP. The semiconductor devices formed on the second semiconductorsubstrate 208 are herein referred to as second semiconductor devices.The second interconnect-level structures (L0-L6) may be formed on thesecond semiconductor substrate 208, and are incorporated into the secondwafer 200. The second interconnect-level structures (L0-L6) and thesecond pad-level structure LP may be laterally offset from the outermostperiphery of the second wafer 200 by a lateral offset distance, whichmay be in a range from 0.2 mm to 1 mm, although lesser and greaterlateral offset distance may also be used. The lateral offset between thesecond interconnect-level structures (L0-L6) and the outermost peripheryof the second wafer 200 is an edge exclusion distance.

The second interconnect-level structures (L0-L6) include dielectricmaterial layers, which are herein referred to as secondinterconnect-level dielectric layers. The second interconnect-leveldielectric layers having formed therein metal interconnect structures,which are herein referred to as second metal interconnect structures.Thus, the second wafer 200 comprises second metal interconnectstructures formed within the second interconnect-level dielectriclayers. The second pad-level structure LP includes a pad-leveldielectric layer and bonding pads formed within the second pad-leveldielectric layer. The second pad-level structure LP may be formed on topof the second-wafer interconnect-level structures (L0-L6).

The second wafer 200 may include CMOS devices and/or any othersemiconductor device (such as memory devices, radio-frequency devices,image-sensing devices, passive devices, etc.) as second semiconductordevices. While the present disclosure is described using an embodimentin which a set of seven interconnect-level structures (L0-L6) are formedin the second wafer 200, embodiments are expressly contemplated hereinin which a different number of interconnect-level structures is used. Inone embodiment, the second wafer 200 comprises a second two-dimensionalarray of second semiconductor dies having a same two-dimensionalperiodicity as the first two-dimensional array of first semiconductordies in the first wafer 100.

Referring to FIGS. 4A and 4B, the first wafer 100 and the second wafer200 may be bonded to each other by bonding a front surface of the firstwafer 100 to a front surface of the second wafer 200. For example, thesecond bonding pads formed within the second pad-level dielectric layerof the second wafer 200 may be bonded to the first bonding pads formedwithin the first pad-level dielectric layer of the first wafer 100.Metal-to-metal bonding (such as copper-to-copper bonding) may be used.For example, the assembly of the first wafer 100 and the second wafer200 may be annealed at an elevated temperature in a range from 250degrees Celsius to 450 degrees Celsius to induce metal-to-metal bondingbetween the first bonding pads and the second bonding pads. In oneembodiment, the first pad-level dielectric layer and the secondpad-level dielectric layer may include silicon oxide, and oxide-to-oxidebonding between the first pad-level dielectric layer and the secondpad-level dielectric layer may be induced prior to metal-to-metalbonding by annealing the assembly of the first wafer 100 and the secondwafer 200 at an elevated temperature in a range from 150 degrees Celsiusto 350 degrees Celsius while the first metal pads contact the secondmetal pads and the first pad-level dielectric layer contacts the secondpad-level dielectric layer.

Referring to FIGS. 5A and 5B, the backside of the first wafer 100 may bethinned by performing at least one wafer thinning process. For example,a first wafer thinning process may be performed to thin the first wafer100 down to a first thickness t1 that is greater than the firstedge-trimming depth td1. In one embodiment, the first wafer thinningprocess may comprise, and/or may consist of, a wafer grinding processthat grinds the backside of the first wafer 100. In one embodiment, thefirst thickness t1 may be in a range from 10 microns to 60 microns, suchas from 15 microns to 50 microns, although lesser and greater thicknessmay also be used. Selecting the first thickness t1 to be greater thanthe first edge-trimming depth td1 provides the advantage of avoidinggrinding of the portion of the first wafer 100 that includes the annularhorizontal surface that is vertically offset from the bonding interfaceby the first edge-trimming depth td1, i.e., the annular horizontalsurface that is formed by the first pre-bonding edge-trimming process.Thus, fragmentation and chipping of edge portions of the first wafer 100from the vicinity of the annular planar surface formed during the firstpre-bonding edge-trimming process may be avoided.

Referring to FIGS. 6A and 6B, a second thinning process that furtherthins the first wafer 100 may be performed. The second wafer thinningprocess thins the first wafer 100 down to a second thickness t2 that isless than the first edge-trimming depth td1 using an thinning processthat is less prone to wafer chipping than a grinding process. Forexample, the second wafer thinning process may use an isotropic etchprocess that etches the material on the backside of the remainingportion of the first wafer 100, and/or may use a chemical mechanicalpolishing (CMP) process. In one embodiment, the second wafer thinningprocess may include an isotropic etch process that uses an “HNA”etchant, which includes a mixture of hydrofluoric acid, nitric acid, andacetic acid. In an illustrative example, the HNA etchant may include a1:3:8 volume mixture of hydrofluoric acid, nitric acid, and acetic acid,which may provide an etch rate for single crystalline silicon in a rangefrom 1 micron per minute to 3 micron per minute depending on thetemperature of the etchant and the doping of the single crystallinesilicon. In one embodiment, the second thickness t2 may be in a rangefrom 2 microns to 10 microns, although lesser and greater thickness mayalso be used.

Generally, the at least one wafer thinning process may be performed toremove untrimmed portions of the first wafer 100, i.e., the portion ofthe first wafer 100 that is not laterally edge-trimmed during the firstpre-bonding edge-trimming process. Specifically, the untrimmed portionsof the first wafer 100 may be portions of the first wafer 100 that arevertically spaced from the horizontal plane including the bondinginterface between the first wafer 100 and the second wafer 200 by agreater vertical distance than the first edge-trimming depth td1. Thus,the at least one wafer thinning process forms a backside surface of thefirst semiconductor substrate 108 within a horizontal plane that may bevertically offset from the bonding interface between the first wafer 100and the second wafer 200 by a vertical spacing that is less than thefirst edge-trimming depth td1. In other words, the second thickness t2is less than the first edge-trimming depth td1. As such, the annularhorizontal surface of the first wafer 100 that may be formed during thefirst pre-bonding edge-trimming process may be removed during the secondthinning process without chipping or fragmenting the portion of thefirst wafer 100 that is adjoined to the annular horizontal surface. Dueto the first pre-bonding edge-trimming process that may be performed onthe first wafer 100 prior to bonding, the sidewalls of the first wafer100 may be laterally offset inward from the sidewalls of the secondwafer 200 that are adjoined to the horizontal plane including thebonding interface between the first wafer 100 and the second wafer 200.

Referring to FIGS. 7A-7C, a terminal edge-trimming process may beperformed, which is also referred to as a post-bonding edge-trimmingprocess. The post-bonding edge-trimming process edge-trims the firstwafer 100 and a front-side peripheral region of the second wafer 200.Portions of the first wafer 100 and the second wafer 200 that arelocated within a terminal edge-trimming width twt from the outermostperiphery of the bonded assembly of the first wafer 100 and the secondwafer 200 (which is the outermost periphery of the second wafer 200) andwithin a terminal edge-trimming depth tdt from the horizontal planeincluding the backside surface of the first wafer 100 may be removedduring the post-bonding edge-trimming process.

The post-bonding edge-trimming process forms a terminal cylindricalsidewall on the first wafer 100 and on the front-side peripheral regionof the second wafer 200 at a location that is laterally offset from theoutermost periphery of the second wafer 200 by the terminaledge-trimming width twt. The terminal edge-trimming width twt is greaterthan the first edge-trimming width tw1. For example, the terminaledge-trimming width twt may be in a range from 1.0 mm to 10.0 mm,although lesser and greater width may also be used. Further, thepost-bonding edge-trimming process may form an annular horizontalsurface on the second wafer 200. The annular horizontal surface may beformed within a horizontal plane that may be vertically spaced from thehorizontal plane including the bonding interface between the first wafer100 and the second wafer 200 by a vertical spacing in a range from 5microns 100 microns, although lesser and greater vertical spacing mayalso be used. In other words, the terminal edge-trimming depth tdt maybe a sum of the second thickness t2 and an additional depth in a rangefrom 10 microns to 50 microns, although lesser and greater depth mayalso be used.

The post-bonding edge-trimming process removes only thin peripheralportions of the first wafer 100 and the second wafer 200. As such, avery smooth profile can be obtained for the trimmed sidewalls and thetrimmed annular horizontal surface of the bonded assembly asschematically illustrated in the inset of FIG. 7C. In other words, thetimed sidewalls and the trimmed annular horizontal surface can have verysmall surface roughness such as root mean square surface roughness lessthan 10 nm, such as less than 3 nm.

Referring to FIG. 8, an upper portion of an exemplary first wafer 100 isillustrated in a magnified view. An encapsulation dielectric layer 130may be subsequently formed on the backside surface of the first wafer100. The encapsulation dielectric layer 130 may include a dielectricmaterial that may protect the bonded assembly (100, 200) during asubsequent singulation process in which each bonded pair of a firstsemiconductor die in the first wafer 100 and a second semiconductor diein the second wafer 200 is singulated into a discrete structure. Theencapsulation dielectric layer 130 may include silicon nitride or a highdielectric constant (high-k) dielectric material having a dielectricconstant greater than 7.9 (such as aluminum oxide, hafnium oxide,tantalum oxide, titanium oxide, etc.). Other suitable materials arewithin the contemplated scope of disclosure. The thickness of theencapsulation dielectric layer 130 may be in a range from 50 nm to 500nm, although lesser and greater thicknesses may also be used.

A photoresist layer (not shown) may be applied over the horizontalportion of the encapsulation dielectric layer 130 that overlie the firstsemiconductor substrate 108, and may be lithographically patterned toform openings therethrough. An anisotropic etch process may be performedto etch through unmasked portions of the encapsulation dielectric layer130, the first semiconductor substrate 108, and a subset of theinterconnect-level dielectric layers 30 such that a horizontal surfaceof an underlying metallic pad structure may be physically exposed. Themetallic pad structures may comprise one of the metal lines of thesecond wafer 200 (such as the first metal lines 41L, the second metallines 42L, the third metal lines 43L, etc.). Through-substrate viacavities 139 may be formed through the first semiconductor substrate 108within each die area of the first wafer 100.

Referring to FIG. 9, a dielectric material such as silicon oxide may beconformally deposited, and may be subsequently anisotropically etched toform through-substrate insulating spacers 146. The lateral thickness ofeach through-substrate insulating spacer 146 may be in a range from 100nm to 500 nm, although lesser and greater thicknesses may also be used.At least one conductive material may be deposited in thethrough-substrate via cavities 139 and over the top surface of theencapsulation dielectric layer 130. For example, a metallic linermaterial (such as TiN, TaN, and/or WN) and at least one metallic fillmaterial (such as Cu, Mo, Ru, W, Al, or a combination thereof) may bedeposited in remaining volumes of the through-substrate via cavities 139and over the top surface of the encapsulation dielectric layer 130. Theat least one metallic fill material may fill the through-substrate viacavities 139. An underbump metallurgy (UBM) layer stack may be depositedover the at least one metallic fill material. Layer stacks that may beused for the UBM layer stack include, but are not limited to, stacks ofCr/Cr—Cu/Cu/Au, Cr/Cr—Cu/Cu, TiW/Cr/Cu, Ti/Ni/Au, and Cr/Cu/Au. Othersuitable materials are within the contemplated scope of disclosure.

The UBM layer stack and the at least one conductive material may besubsequently patterned, for example, by applying and patterning aphotoresist layer and by transferring the pattern in the photoresistlayer through the horizontal portions of the UBM layer stack and the atleast one conductive material. Each remaining portion of the at leastone conductive material located within a respective one of thethrough-substrate via cavities 139 constitutes a through-substrate viastructure 148. Each remaining portion of the at least one conductivematerial and the UBM layer stack that overlie the horizontal planeincluding the distal horizontal surface of the encapsulation dielectriclayer 130 comprises a bonding pad 160, which may be an external bondingpad on which a solder ball may be attached for wire bonding or C4bonding. In an alternative embodiment, the UBM layer stack may beomitted and the at least one conductive material may include copper or acopper alloy as a metallic fill material. In such an embodiment, thebonding pads 160 may have a copper surface that may be subsequently usedfor copper-to-copper bonding with copper bonding pads formed withinanother wafer in a subsequent wafer-to-wafer bonding process that formsa bonded assembly of three wafers.

Referring to FIGS. 10A and 10B, the exemplary structure includes abonded assembly (100, 200) comprising a first wafer 100 bonded to asecond wafer 200 at a bonding interface. A straight cylindrical sidewallmay vertically extend from a backside surface of the first wafer 100over a periphery of the bonding interface to a peripheral region of thesecond wafer 200.

In one embodiment, the first wafer 100 may comprise a firsttwo-dimensional array of first semiconductor dies having atwo-dimensional periodicity, and the second wafer 200 comprises a secondtwo-dimensional array of second semiconductor dies having a sametwo-dimensional periodicity as the first two-dimensional array of firstsemiconductor dies. In this case, the bonded assembly of the first wafer100 and the second wafer 200 may be diced along dicing channels into aplurality of bonded semiconductor chips. For example, the bondedassembly (100, 200) may be diced with a dicing saw along dicing channelsDC. The dicing channels DC may include first dicing channels that areparallel to one another and laterally extend along a first horizontaldirection, and second dicing channels that are parallel to one anotherand laterally extend along a second horizontal direction that isperpendicular to the first horizontal direction. Each of the dicingchannels DC may be located between neighboring pairs of semiconductordies within the first wafer 100 and between neighboring pairs ofsemiconductor dies within the second wafer 200.

Each semiconductor chip 300 that may be singulated by the dicing processmay include a first semiconductor die that is a singulated portion ofthe first wafer 100 and a second semiconductor die that is a singulatedportion of the second wafer 200. As such, each semiconductor chip 300may include a stack of a first semiconductor die and a secondsemiconductor die that are bonded to each other through metal-to-metalbonding between first bonding pads in a first pad-level dielectric layerof the first semiconductor die and second bonding pads in a secondpad-level dielectric layer of the second semiconductor die. Generally,each of the bonded semiconductor chips formed by dicing of the bondedassembly (100, 200) may comprise a bonded pair of a respective one ofthe first semiconductor dies and a respective one of the secondsemiconductor dies. Additional bonding pads 160, which may be externalbonding pads including a respective UBM layer stack, may be provided onthe backside of the second semiconductor die.

Referring to FIGS. 11A and 11B, a second wafer 200 according to a secondembodiment of the present disclosure is illustrated, which may bederived from the second wafer 200 of the first embodiment of FIGS. 3Aand 3B by performing a second pre-bonding edge-trimming process. Thesecond pre-bonding edge-trimming process edge-trims a front-sideperipheral region of the second wafer 200. The second pre-bondingedge-trimming process may remove an annular peripheral portion of thesecond wafer 200 that is located within a second edge-trimming width tw2from the outermost periphery of the second wafer 200, and is locatedwithin a second edge-trimming depth td2 from a horizontal planeincluding the top surface (i.e., a bonding-side surface) of the secondwafer 200. A commercial wafer edge-trimming tool may be used to performthe second pre-bonding edge-trimming process. The second pre-bondingedge-trimming process forms an annular horizontal edge-trimming surfacewithin a horizontal plane located at the second edge-trimming depth td2from the front surface of the second wafer 200. Further, the secondpre-bonding edge-trimming process forms a second cylindrical sidewall onthe second wafer 200 at a location that is laterally offset from theoutermost periphery of the second wafer 200 by the second edge-trimmingwidth tw2. In one embodiment, the second edge-trimming width tw2 may bein a range from 0.1 mm to 5.0 mm, although lesser and greater secondedge-trimming widths may also be used. The second edge-trimming widthtw2 may be greater than the edge exclusion distance of the second wafer200, and is less than a terminal edge-trimming width of a post-bondingedge-trimming process to be used. In one embodiment, the secondedge-trimming depth td2 may be in a range from 5 microns to 20 microns,although lesser and greater second edge-trimming depths may also beused.

In the second embodiment, the first wafer 100 may be prepared using thesame methods as in the first embodiment. Thus, a first pre-bondingedge-trimming process may be performed on the first wafer 100 in thesame manner as in the first embodiment. As such, the second pre-bondingedge-trimming process may be an additional pre-bonding edge-trimmingprocess that may be performed to the second wafer 200 prior to bondingthe front surface of the first wafer 100 to the front surface of thesecond wafer 200. Generally, the second pre-bonding edge-trimmingprocess may form a second cylindrical sidewall on the second wafer 200at a location that is laterally offset from an outermost periphery ofthe second wafer 200 by the second edge-trimming width tw2.

Referring to FIGS. 12A and 12B, the first wafer 100 and the second wafer200 may be bonded to each other by bonding a front surface of the firstwafer 100 to a front surface of the second wafer 200. For example, thesecond bonding pads formed within the second pad-level dielectric layerof the second wafer 200 may be bonded to the first bonding pads formedwithin the first pad-level dielectric layer of the first wafer 100.Metal-to-metal bonding (such as copper-to-copper bonding) may be used.The same bonding process may be used as in the first embodiment.

Referring to FIGS. 13A and 13B, the backside of the first wafer 100 maybe thinned by performing at least one wafer thinning process. Forexample, a first wafer thinning process may be performed to thin thefirst wafer 100 down to a first thickness t1 that is greater than thefirst edge-trimming depth td1. In one embodiment, the first waferthinning process may comprise, and/or may consist of, a wafer grindingprocess that grinds the backside of the first wafer 100. In oneembodiment, the first thickness t1 may be in a range from 10 microns to60 microns, such as from 15 microns to 50 microns. Selecting the firstthickness t1 to be greater than the first edge-trimming depth td1provides the advantage of avoiding grinding of the portion of the firstwafer 100 that includes the annular horizontal surface that isvertically offset from the bonding interface by the first edge-trimmingdepth td1, i.e., the annular horizontal surface that is formed by thefirst pre-bonding edge-trimming process. Thus, fragmentation andchipping of edge portions of the first wafer 100 from the vicinity ofthe annular planar surface formed during the first pre-bondingedge-trimming process may be avoided.

Referring to FIGS. 14A and 14B, a second thinning process that furtherthins the first wafer 100 may be performed. The second wafer thinningprocess thins the first wafer 100 down to a second thickness t2 that isless than the first edge-trimming depth td1 using an thinning processthat is less prone to wafer chipping than a grinding process. Forexample, the second wafer thinning process may use an isotropic etchprocess that etches the material on the backside of the remainingportion of the first wafer 100, and/or may use a chemical mechanicalpolishing (CMP) process. In one embodiment, the second wafer thinningprocess may include an isotropic etch process that uses the HNA etchantdescribed above. In one embodiment, the second thickness t2 may be in arange from 2 microns to 10 microns.

Generally, the at least one wafer thinning process may be performed toremove untrimmed portions of the first wafer 100, i.e., the portion ofthe first wafer 100 that is not laterally edge-trimmed during the firstpre-bonding edge-trimming process. The at least one wafer thinningprocess forms a backside surface of the first semiconductor substrate108 within a horizontal plane that is vertically offset from the bondinginterface between the first wafer 100 and the second wafer 200 by avertical spacing that is less than the first edge-trimming depth td1.The annular horizontal surface of the first wafer 100 that is formedduring the first pre-bonding edge-trimming process may be removed duringthe second thinning process without chipping or fragmenting the portionof the first wafer 100 that is adjoined to the annular horizontalsurface.

Referring to FIGS. 15A and 15B, a terminal edge-trimming process may beperformed, which is also referred to as a post-bonding edge-trimmingprocess. The post-bonding edge-trimming process edge-trims the firstwafer 100 and a front-side peripheral region of the second wafer 200.Portions of the first wafer 100 and the second wafer 200 that arelocated within a terminal edge-trimming width twt from the outermostperiphery of the bonded assembly of the first wafer 100 and the secondwafer 200 (which is the outermost periphery of the second wafer 200) andwithin a terminal edge-trimming depth tdt from the horizontal planeincluding the backside surface of the first wafer 100 are removed duringthe post-bonding edge-trimming process.

The post-bonding edge-trimming process forms a terminal cylindricalsidewall on the first wafer 100 and on the front-side peripheral regionof the second 200 at a location that is laterally offset from theoutermost periphery of the second wafer 200 by the terminaledge-trimming width twt. The terminal edge-trimming width twt is greaterthan the first edge-trimming width tw1, and is greater than the secondedge-trimming width tw2. For example, the terminal edge-trimming widthtwt may be in a range from 1.0 mm to 10.0 mm. Further, the post-bondingedge-trimming process may form an annular horizontal surface on thesecond wafer 200. The annular horizontal surface may be formed within ahorizontal plane that is vertically spaced from the horizontal planeincluding the bonding interface between the first wafer 100 and thesecond wafer 200 by a vertical spacing that is greater than the secondedge-trimming depth td2. For example, the annular horizontal surfaceformed on the second wafer 200 by the post-bonding edge-trimming processmay be formed within a horizontal plane that is vertically spaced fromthe horizontal plane including the bonding interface between the firstwafer 100 and the second wafer 200 by a vertical spacing in a range from5 microns 100 microns. In other words, the terminal edge-trimming depthtdt may be a sum of the second thickness t2 and an additional depth in arange from 10 microns to 50 microns.

Subsequently, the processing steps of FIGS. 8, 9, and 10A and 10B may beperformed to dice the bonded assembly of the first wafer 100 and thesecond wafer 200 into a plurality of bonded semiconductor chipsincluding a respective pair of a first semiconductor die and a secondsemiconductor die.

Referring to FIG. 16, a first flowchart illustrates steps that may beused to form one of the exemplary structures of the present disclosure.At step 1610, a front-side peripheral region of a first wafer 100 may beedge-trimmed by performing a pre-bonding edge-trimming process (such asthe first pre-bonding edge-trimming process of FIGS. 2A and 2B). At step1620, a front surface of the first wafer 100 may be bonded to a frontsurface of a second wafer 200. Referring to step 1630, a backside of thefirst wafer 100 may be thinned by performing at least one wafer thinningprocess. Referring to step 1640, the first wafer 100 and a front-sideperipheral region of the second wafer 200 may be edge-trimmed byperforming a post-bonding edge-trimming process.

Referring to FIG. 17, a second flowchart illustrates steps that may beused to form one of the exemplary structures of the present disclosure.At step 1710, a front-side peripheral region of a first wafer 100 may beedge-trimmed by performing a first pre-bonding edge-trimming process. Atstep 1720, a front-side peripheral region of a second wafer 200 may beedge-trimmed by performing a second pre-bonding edge-trimming process.At step 1730, a bonded assembly (100, 200) may be formed by bonding afront surface of the first wafer 100 to a front surface of the secondwafer 200. At step 1740, untrimmed portions of the first wafer 100 maybe removed by thinning a backside of the first wafer 100 in the bondedassembly (100, 200) using at least one thinning process. A backsidesurface of the first wafer 100 adjoins a cylindrical sidewall formedduring the first pre-bonding edge-trimming process. At step 1750, thebonded assembly (100, 200) may be edge-trimmed by performing apost-bonding edge-trimming process that trims the first wafer 100 andthe front-side peripheral region of the second wafer 200 (withoutedge-trimming the backside peripheral region of the second wafer 200).

Referring to FIG. 18, a third flowchart illustrates steps that may beused to form one of the exemplary structures of the present disclosure.At step 1810, a first wafer 100 including a first two-dimensional arrayof first semiconductor dies may be provided. At step 1820, a secondwafer 200 including a second two-dimensional array of secondsemiconductor dies having a same two-dimensional periodicity as thefirst two-dimensional array of first semiconductor dies may be provided.At step 1830, a front-side peripheral region of the first wafer may beedge-trimmed by performing a pre-bonding edge-trimming process (such asthe first pre-bonding edge-trimming process of FIGS. 2A and 2B). At step1840, a bonded assembly (100, 200) may be formed by bonding a frontsurface of the first wafer 100 to a front surface of a second wafer 200.Each of the first semiconductor dies is bonded to a respective one ofthe second semiconductor dies. At step 1850, a backside of the firstwafer 100 may be thinned by performing at least one wafer thinningprocess. At step 1860, the first wafer 100 and a front-side peripheralregion of the second wafer 200 may be edge-trimmed by performing apost-bonding edge-trimming process. At step 1870, the bonded assembly(100, 200) may be diced into a plurality of bonded semiconductor chips.Each of the bonded semiconductor chips comprises a bonded pair of arespective one of the first semiconductor dies and a respective one ofthe second semiconductor dies.

The various structures and methods of the present disclosure may be usedto provide effective edge-trimming for two wafers that are bonded toform a bonded assembly. The vertical extent of a first pre-bondingedge-trimming process is limited to an upper peripheral region of afirst wafer 100, and may have a first edge-trimming depth td1 in a rangefrom 10 microns to 50 microns, and thus, may be less than 10% of theentire thickness of the first wafer. In case a second pre-bondingedge-trimming process is used, a vertical extent of the secondpre-bonding edge-trimming process is limited to an upper peripheralregion of the second wafer 200, and may have a second edge-trimmingdepth td2 in a range from 5 microns to 20 microns. The vertical extentof a post-bonding edge-trimming process is limited to a terminaledge-trimming depth tdt, which may be the same as the sum of the secondthickness t2 and a vertical depth in a range from 10 microns to 50microns. Each edge-trimming process may have a vertical extent that issignificantly less than the thickness of a wafer prior to thinning,which may be in a range from 725 microns to 825 microns. Thus, themethods of the present disclosure reduces the total processing time usedfor edge-trimming processes, reduces the total processing cost foredge-trimming processes, and provides high wafer processing capacity forthe edge-trimming processes with a moderate number of processing tools.Further, the methods of the present disclosure effectively reducespeeling of interconnect-level structures (L0-L6) and pad-levelstructures LP in the first wafer 100 and the second wafer 200 prior to,and/or after, bonding the first wafer 100 with the second wafer 200.Thus, the effectiveness of the edge-trimming may last throughout thebonding process and the dicing process. Therefore, the methods of thepresent disclosure provide a cost-effective and reliable edge-trimmingduring bonding and wafer dicing.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of forming a semiconductor structure,comprising: edge-trimming a front-side peripheral region of a firstwafer comprising a first semiconductor substrate, first semiconductordevices, and first metal bonding pads that are electrically connected tothe first semiconductor devices and are formed within, and are laterallysurrounded by, a first pad-level dielectric layer by performing a firstpre-bonding edge-trimming process while metallic bonding surfaces of thefirst metal bonding pads are exposed, wherein the metallic bondingsurfaces of the first metal bonding pads are vertically offset from afirst annular horizontal edge-trimming surface of the first wafer thatis a horizontal surface of the first semiconductor substrate by a firstedge-trimming depth; edge-trimming a front-side peripheral region of asecond wafer comprising a second semiconductor substrate, secondsemiconductor devices, and second metal bonding pads that areelectrically connected to the second semiconductor devices and areformed within, and are laterally surrounded by, a second pad-leveldielectric layer by performing a second pre-bonding edge-trimmingprocess while metallic bonding surfaces of the second metal bonding padsare exposed, wherein the metallic bonding surfaces of the second metalbonding pads are vertically offset from a second annular horizontaledge-trimming surface of the second wafer that is a horizontal surfaceof the second semiconductor substrate by a second edge-trimming depth;forming a bonded assembly by bonding the first metal bonding pads at afront surface of the first wafer to the second metal bonding pads at afront surface of the second wafer employing metal-to-metal bonding whilethe second annular horizontal edge-trimming surface is vertically offsetfrom the first annular horizonal edge-trimming surface by a sum of thefirst edge-trimming depth and the second edge-trimming depth; removinguntrimmed portions of the first wafer by thinning a backside of thefirst wafer in the bonded assembly using at least one thinning process,wherein a backside surface of the first wafer adjoins a cylindricalsidewall formed during the first pre-bonding edge-trimming process;edge-trimming the bonded assembly by performing a post-bondingedge-trimming process that trims at least a remaining portion of thefirst semiconductor substrate, a remaining portion the first pad-leveldielectric layer, and a remaining portion the second pad-leveldielectric layer during the post-bonding edge-trimming process and formsan annular horizontal surface on the second wafer; and formingthrough-substrate via structures through a remaining portion of thefirst semiconductor substrate.
 2. The method of claim 1, wherein: thepre-bonding edge-trimming process forms an annular horizontaledge-trimming surface within a horizontal plane located at a firstedge-trimming depth from the front surface of the first wafer; and theannular horizontal edge-trimming surface is removed during thinning ofthe backside of the first wafer.
 3. The method of claim 2, wherein thefirst wafer has a thickness that is less than the first edge-trimmingdepth after the backside of the first wafer in the bonded assembly isthinned.
 4. The method of claim 3, wherein the backside of the firstwafer in the bonded assembly is thinned by performing: a first waferthinning process that thins the first wafer down to a first thicknessthat is greater than the first edge-trimming depth; and a second waferthinning process that thins the first wafer down to a second thicknessthat is less than the first edge-trimming depth.
 5. The method of claim1, wherein: the first pre-bonding edge-trimming process forms a firstcylindrical sidewall on the first wafer at a location that is laterallyoffset from an outermost periphery of the first wafer by a firstedge-trimming width; the second pre-bonding edge-trimming process formsa second cylindrical sidewall on the second wafer at a location that islaterally offset from an outermost periphery of the second wafer by asecond edge-trimming width; and the post-bonding edge-trimming processforms a terminal cylindrical sidewall on the first wafer and on thefront-side peripheral region of the second wafer at a location that islaterally offset from an outermost periphery of the second wafer by aterminal edge-trimming width that is greater than the firstedge-trimming width and is greater than the second edge-trimming width.6. The method of claim 1, wherein the annular horizontal surface isformed within a horizontal plane that is vertically spaced from ahorizontal plane including a bonding interface between the first waferand the second wafer by a vertical spacing in a range from 5 microns 100microns.
 7. The method of claim 1, wherein: the first interconnect-levelstructures include at least one first interconnect-level dielectriclayer embedding first metal lines and first metal via structures; andthe at least one second interconnect-level structure includes at leastone second interconnect-level dielectric layer embedding second metallines and second metal via structures.
 8. The method of claim 7,wherein: the first pre-bonding edge-trimming process removes edgeportions of the first interconnect-level structures; and the secondpre-bonding edge-trimming process removes edge portions of the at leastone second interconnect-level structure.
 9. The method of claim 7,wherein the first pre-bonding edge trimming process physically exposes acylindrical surface of the first interconnect-level structures thatvertically extends from a bottommost surface of the firstinterconnect-level structures to a topmost surface of the firstinterconnect-level structures.
 10. The method of claim 9, wherein thesecond pre-bonding edge trimming process physically exposes acylindrical surface of the at least one second interconnect-levelstructure that vertically extends from a bottommost surface of the atleast one second interconnect-level structure to a topmost surface ofthe at least one second interconnect-level structure.
 11. The method ofclaim 7, wherein the through-substrate via cavities are formed through aportion of the at least one first interconnect-level dielectric layerand horizontal surfaces of the first metal lines are exposed to thethrough-substrate via cavities.
 12. The method of claim 11, furthercomprising forming through-substrate insulating spacers around thethrough-substrate via cavities on physically exposedvertically-extending surfaces of the first semiconductor substrate andthe at least one first interconnect-level dielectric layer, wherein eachof the through-substrate via structures is formed on an inner sidewallof a respective one of the through-substrate insulating spacers.
 13. Themethod of claim 12, further comprising: depositing at least oneconductive material in volumes of the through-substrate via cavitiesthat remain after forming the through-substrate insulating spacers; andremoving portions of the at least one conductive material that aredeposited outside the through-substrate via cavities without removingportions of the at least one conductive material that are depositedinside the through-substrate via cavities, wherein portions of the atleast one conductive material located within volumes of thethrough-substrate via cavities comprise the through-substrate viastructures.
 14. The method of claim 13, wherein: the at least oneconductive material comprises a metallic liner material, at least onemetallic fill material that is deposited over the metallic linermaterial, and an underbump metallurgy layer stack that is deposited overthe at least one metallic fill material; and portions of the at leastone conductive material located outside the volumes of thethrough-substrate via cavities comprise bonding pads.
 15. The method ofclaim 14, wherein: an encapsulation dielectric layer is formed over thebackside horizontal surface of the first wafer prior to formation of thethrough-substrate via cavities; the metallic liner material and at leastone metallic fill material are deposited in the volumes of thethrough-substrate via cavities and above the encapsulation dielectriclayer; and the underbump metallurgy layer stack is deposited outside thevolumes of the through-substrate via cavities and above theencapsulation dielectric layer.
 16. The method of claim 1, wherein: thefirst wafer comprises a first two-dimensional array of firstsemiconductor dies; the second wafer comprises a second two-dimensionalarray of second semiconductor dies having a same two-dimensionalperiodicity as the first two-dimensional array of first semiconductordies; and the method comprises dicing a bonded assembly of the firstwafer and the second wafer along dicing channels.
 17. The method ofclaim 1, further comprising forming an encapsulation dielectric layer ona backside horizontal surface of the first wafer and on a terminalcylindrical sidewall of the first wafer and on the front-side peripheralregion of the second wafer after the post-bonding edge-trimming process,wherein the through-substrate via cavities are formed through arespective opening in the encapsulation dielectric layer.
 18. A methodof forming a semiconductor structure, comprising: edge-trimming afront-side peripheral region of a first wafer comprising a firstsemiconductor substrate, first semiconductor devices, and first metalbonding pads that are electrically connected to the first semiconductordevices and are formed within, and are laterally surrounded by, a firstpad-level dielectric layer by performing a first pre-bondingedge-trimming process while metallic bonding surfaces of the first metalbonding pads are exposed, wherein the metallic bonding surfaces of thefirst metal bonding pads are vertically offset from a first annularhorizontal edge-trimming surface of the first wafer that is a horizontalsurface of the first semiconductor substrate by a first edge-trimmingdepth; edge-trimming a front-side peripheral region of a second wafercomprising a second semiconductor substrate, second semiconductordevices, and second metal bonding pads that are electrically connectedto the second semiconductor devices and are formed within, and arelaterally surrounded by, a second pad-level dielectric layer byperforming a second pre-bonding edge-trimming process while metallicbonding surfaces of the second metal bonding pads are exposed, whereinthe metallic bonding surfaces of the second metal bonding pads arevertically offset from a second annular horizontal edge-trimming surfaceof the second wafer that is a horizontal surface of the secondsemiconductor substrate by a second edge-trimming depth; forming abonded assembly by bonding the first metal bonding pads at a frontsurface of the first wafer to the second metal bonding pads at a frontsurface of the second wafer by inducing metal-to-metal bonding betweenthe first metal bonding pads and the second metal bonding pads while thesecond annular horizontal edge-trimming surface is vertically offsetfrom the first annular horizonal edge-trimming surface by a sum of thefirst edge-trimming depth and the second edge-trimming depth; removinguntrimmed portions of the first wafer by thinning a backside of thefirst wafer in the bonded assembly using at least one thinning process,wherein a backside surface of the first wafer adjoins a cylindricalsidewall formed during the first pre-bonding edge-trimming process;edge-trimming the bonded assembly by performing a post-bondingedge-trimming process that trims at least a remaining portion of thefirst semiconductor substrate, a remaining portion the first pad-leveldielectric layer, and a remaining portion the second pad-leveldielectric layer during the post-bonding edge-trimming process and formsan annular horizontal surface on the second wafer; and formingthrough-substrate via structures through a remaining portion of thefirst semiconductor substrate.
 19. The method of claim 18, wherein: thefirst bonding pads are embedded within a first pad-level dielectriclayer comprising silicon oxide and located in the first wafer; thesecond bonding pads are embedded within a second pad-level dielectriclayer comprising silicon oxide and located in the second wafer; and themethod comprises inducing oxide-to-oxide bonding between the firstpad-level dielectric layer and the second pad-level dielectric layer.20. A method of forming a semiconductor structure, comprising:edge-trimming a front-side peripheral region of a first wafer comprisinga first semiconductor substrate, first field effect transistors locatedon a top surface of the first semiconductor substrate, firstinterconnect-level dielectric layers, and first metal bonding pads thatare electrically connected to the first field effect transistors and areformed within, and are laterally surrounded by, a first pad-leveldielectric layer by performing a first pre-bonding edge-trimming processthat removes edge portions of the first interconnect-level structureswhile metallic bonding surfaces of the first metal bonding pads areexposed, wherein the metallic bonding surfaces of the first metalbonding pads are vertically offset from a first annular horizontaledge-trimming surface of the first wafer that is a horizontal surface ofthe first semiconductor substrate by a first edge-trimming depth;edge-trimming a front-side peripheral region of a second wafercomprising a second semiconductor substrate, second field effecttransistors located on a top surface of the second semiconductorsubstrate, second interconnect-level dielectric layers, and second metalbonding pads that are electrically connected to the second field effecttransistors and are formed within, and are laterally surrounded by, asecond pad-level dielectric layer by performing a second pre-bondingedge-trimming process while metallic bonding surfaces of the secondmetal bonding pads are exposed, wherein the metallic bonding surfaces ofthe second metal bonding pads are vertically offset from a secondannular horizontal edge-trimming surface of the second wafer that is ahorizontal surface of the second semiconductor substrate by a secondedge-trimming depth; forming a bonded assembly by bonding the firstmetal bonding pads at a front surface of the first wafer to the secondmetal bonding pads at a front surface of the second wafer employingmetal-to-metal bonding while the second annular horizontal edge-trimmingsurface is vertically offset from the first annular horizonaledge-trimming surface by a sum of the first edge-trimming depth and thesecond edge-trimming depth; removing untrimmed portions of the firstwafer by thinning a backside of the first wafer in the bonded assemblyusing at least one thinning process, wherein a backside surface of thefirst wafer adjoins a cylindrical sidewall formed during the firstpre-bonding edge-trimming process; edge-trimming the bonded assembly byperforming a post-bonding edge-trimming process that trims at least aremaining portion of the first semiconductor substrate, a remainingportion the first pad-level dielectric layer, and a remaining portionthe second pad-level dielectric layer during the post-bondingedge-trimming process and forms an annular horizontal surface on thesecond wafer; and forming through-substrate via structures through aremaining portion of the first semiconductor substrate.